K4D623238B-GC Datasheet, PDF (16/17 Pages) Samsung semiconductor – 64Mbit DDR SDRAM

K4D623238B-GC
64M DDR SDRAM
K4D623238B-GC50
Frequency
Cas Latency tRC
200MHz ( 5.0ns )
3
12
183MHz ( 5.5ns )
3
12
166MHz ( 6.0ns )
3
10
tRFC
14
14
12
tRAS tRCDRD tRCDWR tRP
8
4
2
4
8
4
2
4
7
3
2
3
tRRD
2
2
2
tDAL
Unit
7
tCK
7
tCK
6
tCK
K4D623238B-GC55
Frequency
Cas Latency tRC
183MHz ( 5.5ns )
3
12
166MHz ( 6.0ns )
3
10
tRFC
14
12
tRAS tRCDRD tRCDWR tRP
8
4
2
4
7
3
2
3
tRRD
2
2
tDAL
Unit
7
tCK
6
tCK
K4D623238B-GC60
Frequency
Cas Latency tRC
166MHz ( 6.0ns )
3
10
tRFC
12
tRAS tRCDRD tRCDWR tRP
7
3
2
3
tRRD
2
tDAL
Unit
6
tCK
Simplified Timing(2) @ BL=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CK, CK
BA[1:0] _BAa
BAa
BAa
BAa
BAb BAa
BAb
A 8 / A P R_Ra_a
ADDR
( A 0 ~ A 7 , Ra
Ca
A9,A10)
WE
Ra
Rb
Ra
Rb
Ca
Cb
DQS
DQ
Da0 Da1 Da2 Da3
DM
COMMAND
ACTIVEA
WRITEA
tRCD
tRAS
tRC
Normal Write Burst
(@ BL=4)
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
PRECH
ACTIVEA
ACTIVEB WRITEA
WRITEB
tRP
tRRD
Multi Bank Interleaving Write Burst
(@ BL=4)
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Rev. 1.4 (Sep. 2002)