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K4D623238B-GC Datasheet, PDF (11/17 Pages) Samsung semiconductor – 64Mbit DDR SDRAM
K4D623238B-GC
64M DDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T A=0 to 65°C )
Parameter
Symbol
Test Condition
Version
Unit Note
-33 -40 -45 -50 -55 -60
Operating Current
(One Bank Active)
IC C 1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tC C(min)
470 340 315 290 275 260 mA 1
Precharge Standby Current
in Power-down mode
IC C 2P
CKE ≤ VIL(max), tCC= tCC(min)
75 65 65 65 65 65 mA
Precharge Standby Current
in Non Power-down mode
IC C 2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
155 125 120 115 110 105 mA
Active Standby Current
power-down mode
IC C 3P CKE ≤ VIL(max), tCC= tCC(min)
150 130 130 130 130 130 mA
Active Standby Current in
in Non Power-down mode
IC C 3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
270 220 210 200 190 180 mA
Operating Current
( Burst Mode)
IC C 4
IOL=0mA ,tCC = tCC(min),
Page Burst, All Banks activated.
900 700 650 600 550 520 mA
Refresh Current
Self Refresh Current
IC C 5
IC C 6
tRC ≥ tRFC(min)
CKE ≤ 0.2V
405 340 330 320 310 300 mA 2
4.5
4
mA 3
1
mA 4
Operating Current
( 4Bank Interleaving)
IC C 7
Burst Lenth=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tC C(min)
1050 850 800 750 700 670 mA
Note : 1. Measured with outputs open.
2. Refresh period is 16ms.
3. K4D623238B-GC*
4. K4D623238B-GL*
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, V DD/ VDDQ =2.5V+ 5%, T A=0 to 65°C)
Parameter
Symbol
Min
Typ
Max
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
VIH
VREF +0.35
-
V IL
-
-
-
VREF -0.35
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VD D Q+0.6
Clock Input Crossing Point Voltage; CK and CK
VIX
0 . 5 * VDDQ- 0 . 2
-
0.5*VDDQ +0.2
Unit
V
V
V
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
- 11 -
Rev. 1.4 (Sep. 2002)