S5L1462B Datasheet, PDF (12/43 Pages) Samsung semiconductor – CD and DVD playback

S5L1462B
RF SIGNAL PROCESSOR
ELECTRICAL CHARACTERISTICS (Continued)
No
Item
Symbol
Input
TRACKING ERROR AMP (3-BEARN)
67 TE3 Voltage
Gain
Vte31
E=1kHz Sine 316mVpp+Vc
F=1kHz Sine(I) 316mVpp+Vc
TBAL=80, GAIN_TE3=10dB,
TEOFST=80H
68
Vte32 E=1kHz Sine 30mVpp+Vc,
F=1kHz Sine(I) 30mVpp+Vc,
TBAL=80, GAIN_TE3=30dB,
TEOFST=80H
Measuring
Output
point
Min. Typ. Max.
TE
1.8
2.0
2.2
TE
69 Out. Voltage H
Vte3h E=Vc-0.7V,F= Vc,GAIN_FE=10dB
TE
70 Out. Voltage L
Vte3l E=Vc+0.7V,F=Vc,GAIN_FE=10dB
TE
71 Bandwidth
Fte3
E=Sine 316mVpp+Vc, Freq.
TE
(-3dB Freq.)
Sweep F=Sine(I) 316mVpp+Vc,
Freq. Sweep TBAL=80H,
GAIN_TE3=10dB, TEOFST=80H
2.8
2.9
0.4
0.5
45K 60K 75K
72
Tracking
Balance Range
73
74 Offset Voltage
75 Tracking Offset
Range
76
Gte31
Gte32
Voste3
Voste31
Voste32
E=1kHz Sine 316mVpp+Vc
F=1kHz Sine(I) 316mVpp+Vc
TBAL=00H, GAIN_TE3=18dB,
TEOFST=80H
E=1kHz Sine 316mVpp+Vc
F=1kHz Sine(I) 316mVpp+Vc
TBAL=FFH, GAIN_TE3=18dB,
TEOFST=80H
E,F=Vc,TBAL=80, GAIN_TE3
=26dB, TE3OFST=80H
E,F=Vc, TBAL=80,
Gain=TE3=26dB
TEOFST=00H
E,F=Vc, TBAL=80,
Gain=TE3=26dB
TEOFST=FFH
TE
3
-
-
-
-
-3
TE
-300
0
300
TE
0
0.5
TE
0.3
3.3
Unit
Vpp
V
Hz
dB
dB
mV
V
V
12