K4S640432H-UC Datasheet, PDF (12/14 Pages) Samsung semiconductor – 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SDRAM 64Mb H-die (x4, x8, x16)
IBIS SPECIFICATION
IOH Characteristics (Pull-up)
Voltage
133MHz
Min
(V)
I (mA)
3.45
-
3.30
-
3.00
-0.35
2.70
-3.75
2.50
-6.65
1.95
-13.75
1.80
-17.75
1.65
-20.55
1.50
-23.55
1.40
-26.2
1.00
-36.25
0.20
-46.5
133MHz
Max
I (mA)
-1.68
-19.11
-51.87
-90.44
-107.31
-137.9
-158.34
-173.6
-188.79
-199.01
-241.15
-351.68
CMOS SDRAM
133MHz Pull-up
0 0.5 1 1.5 2 2.5 3 3.5
0
-100
-200
-300
-400
-500
-600
Voltage
IOH Min (133MHz)
IOH Max (133MHz)
IOL Characteristics (Pull-down)
Voltage
133MHz
Min
(V)
I (mA)
3.45
43.92
3.30
-
3.00
43.36
1.95
41.20
1.80
40.56
1.65
39.60
1.50
38.40
1.40
37.28
1.00
30.08
0.85
26.64
0.65
21.52
0.40
14.16
133MHz
Max
I (mA)
155.82
-
153.72
148.40
146.02
141.75
136.08
131.39
105.84
93.66
75.25
49.14
133MHz Pull-down
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Voltage
IOL Min (133MHz)
IOL Max (133MHz)
Rev. 1.3 August 2004