DS_K7N163601A Datasheet, PDF (12/24 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 Pipelined NtRAM

K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM^TM
DC ELECTRICAL CHARACTERISTICS (VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
Input Leakage Current(except ZZ)
IIL
VDD=Max ; VIN=VSS to V DD
-2
+2
Output Leakage Current
IOL Output Disabled, Vout=V SS to VDDQ
-2
+2
-25
-
470
Operating Current
Device Selected, IOUT=0mA,
ICC
ZZ≤VIL , Cycle Time ≥ tCYC Min
-20
-
400
-16
-
350
-13
-
290
-25
-
120
Device deselected, IOUT=0mA,
-20
-
100
ISB ZZ≤VIL, f=Max, All Inputs≤0.2V or ≥
VDD-0.2V
-16
-
90
-13
-
90
Standby Current
Device deselected, IOUT=0mA,
ISB1 ^{ZZ≤0.2V,}
f=0, All Inputs=fixed (VDD-0.2V or
-
70
UNIT NOTES
µA
µA
mA
1,2
mA
mA
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
ISB2
VOL
VOH
VOL
VOH
VIL
VIH
VIL
VIH
Device deselected, IOUT=0mA,
ZZ≥VDD-0.2V, f=Max, All Inputs ≤V IL
or ≥VIH
IOL=8.0mA
IOH=-4.0mA
IOL=1.0mA
IOH=-1.0mA
-
60
mA
-
0.4
V
2.4
-
V
-
0.4
V
2.0
-
V
-0.3*
0.8
V
2.0 VDD+0.3** V
3
-0.3*
0.7
V
1.7 VDD+0.3** V
3
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH= VDDQ+0.3V
VIH
VSS
VSS-1.0V
20% tCYC (MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
VALUE
0 to 3.0V
0 to 2.5V
1.0V/ns
1.0V/ns
1.5V
VDDQ/2
See Fig. 1
* The above parameters are also guaranteed at industrial temperature range.
- 12 -
Nov. 2003
Rev 3.0