DS_K7N163601A Datasheet, PDF (11/24 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 Pipelined NtRAM

K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM^TM
ASYNCHRONOUS TRUTH TABLE
OPERATION
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
H
X
High-Z
L
L
DQ
L
H
High-Z
L
X Din, High-Z
L
X
High-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
T OPR
0 to 70
°C
Industrial
T OPR
-40 to 85
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Supply Voltage
VDD
VDDQ
3.135
3.135
Ground
VSS
0
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Supply Voltage
VDD
VDDQ
3.135
2.375
Ground
VSS
0
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1MHz)
Parameter
Input Capacitance
Output Capacitance
Symbol
CIN
C OUT
*Notes : Sampled not 100% tested.
Test Condition
VIN=0V
VOUT =0V
Typ.
3.3
3.3
0
Typ.
3.3
2.5
0
Min
-
-
MAX
3.465
3.465
0
UNIT
V
V
V
MAX
3.465
2.9
0
UNIT
V
V
V
Max
5
7
Unit
pF
pF
- 11 -
Nov. 2003
Rev 3.0