M312L2920BT Datasheet, PDF (11/23 Pages) Samsung semiconductor – DDR SDRAM Registered Module

512MB, 1GB, 2GB TSOP Registered DIMM
DDR SDRAM
DDR SDRAM IDD spec table
M383(12)L2920BTS [ (128M x 4) * 18 , 1GB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
AA(DDR266@CL=2)
2,610
3,010
420
1,170
690
870
1,530
3,330
3,420
4,950
420
380
6,750
A2(DDR266@CL=2)
2,610
3,010
420
1,170
690
870
1,530
3,330
3,420
4,950
420
380
6,750
B0(DDR266@CL=2.5)
2,610
3,010
420
1,170
690
870
1,530
3,330
3,420
4,950
420
380
6,750
(V_DD=2.7V, T = 10?C)
A0(DDR200@CL=2) Unit Notes
2,610
mA
3,010
mA
420
mA
1,170
mA
690
mA
870
mA
1,530
mA
3,330
mA
3,420
mA
4,950
mA
420
mA
380
mA Optional
6,750
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M383(12)L5628BT1(0) [ (st.256M x 4) * 18 , 2GB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
AA(DDR266@CL=2)
3,760
4,210
760
1,960
1,300
1,660
2,680
4,480
4,570
6,100
760
680
7,900
A2(DDR266@CL=2)
3,760
4,210
760
1,960
1,300
1,660
2,680
4,480
4,570
6,100
760
680
7,900
B0(DDR266@CL=2.5)
3,760
4,210
760
1,960
1,300
1,660
2,680
4,480
4,570
6,100
760
680
7,900
(V_DD=2.7V, T = 10?C)
A0(DDR200@CL=2) Unit Notes
3,760
mA
4,210
mA
760
mA
1,960
mA
1,300
mA
1,660
mA
2,680
mA
4,480
mA
4,570
mA
6,100
mA
760
mA
680
m A Optional
7,900
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Revison 1.0 December, 2003