M312L2920BT Datasheet, PDF (10/23 Pages) Samsung semiconductor – DDR SDRAM Registered Module

512MB, 1GB, 2GB TSOP Registered DIMM
DDR SDRAM
DDR SDRAM IDD spec table
M383(12)L6523BTS [ (64M x 8) * 9 , 512MB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
AA(DDR266@CL=2)
1,620
1,840
370
895
505
595
1,080
1,980
2,020
2,790
370
350
3,670
A2(DDR266@CL=2)
1,490
1,720
350
770
480
570
950
1,850
1,900
2,660
350
330
3,560
B0(DDR266@CL=2.5)
1,490
1,720
350
770
480
570
950
1,850
1,900
2,660
350
330
3,560
(V_DD =2.7V, T = 10?C)
A0(DDR200@CL=2) Unit Notes
1,490
mA
1,720
mA
350
mA
770
mA
480
mA
570
mA
950
mA
1,850
mA
1,900
mA
2,660
mA
350
mA
330
mA Optional
3,560
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M383(12)L2923BTS [ (64M x 8) * 18 , 1GB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
AA(DDR266@CL=2)
2,190
2,420
540
1,290
810
990
1,650
2,550
2,600
3,360
540
500
4,260
A2(DDR266@CL=2)
2,190
2,420
540
1,290
810
990
1,650
2,550
2,600
3,360
540
500
4,260
B0(DDR266@CL=2.5)
2,190
2,420
540
1,290
810
990
1,650
2,550
2,600
3,360
540
500
4,260
(V_DD =2.7V, T = 10?C)
A0(DDR200@CL=2)
Unit
Notes
2,190
mA
2,420
mA
540
mA
1,290
mA
810
mA
990
mA
1,650
mA
2,550
mA
2,600
mA
3,360
mA
540
mA
500
mA Optional
4,260
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Revison 1.0 December, 2003