STBP423S Datasheet, PDF (5/7 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for extremely low R DS (ON).

STB/P423S
4800
4000
Ciss
3200
2400
1600
6
Coss
800
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =-24V
8
ID=-24A
6
4
2
0
0 12 24 36 48 60 72 84 96
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
1600
600
Tr
1000
600
TD(off)
100
Tf
TD(on)
100
100m1s0ms1ms
10
1s
DC
10
V DS =-24V,ID=-30A
V G S =-10V
1
6 10
60 100 300 600
R g, G ate R es is tance (ı )
F igure 11.s witching characteris tics
2
1
D =0 . 5
V GS =10V
1 S ingle P ulse
Tc=25 C
0.5
0.1
1
10 20 40
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
0.2
0.1
0.1 _0.05
0.02
0.01
S ingle P uls e
0.01
0.01
0.1
1
10
100
S quare Wave P uls e Duration (ms ec)
P DM
t1
t2
1. R ⋇JC (t)=r (t) * R ⋇JC
2. R ⋇JC=S ee Datas heet
3. T JM-T C = P * R ⋇JC (t)
4. Duty C ycle, D=t1/t2
1000
10000
F igure 13. Normalized T hermal T rans ient Impedance C urve
5