STBP423S Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for extremely low R DS (ON).

STB/P423S
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^a
Diode Forward Voltage
VSD VGS = 0V, Is = -10A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-0.91 -1.3 V
120
VG S = -10V
96
VG S = -4V
72
VG S = -3.5V
48
VG S = -3V
24
0
0 0.5 1 1.5 2 2.5 3
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
16
T j=125 C
12
8
25 C
-55 C
4
0
0.8 1.6 ^2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
24
20
16
12
VGS=- 4.5V
VG S = -10V
8
4
1
1
24
48
72
96
120
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8
V G S =-10V
ID=-24A
1.6
1.4
1.2
V G S =-4.5V
ID=-12A
1.0
0.0
0
25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3