STBP423S Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for extremely low R DS (ON).

STB/P423S
1.2
1.27
1.1
V DS =V G S
ID=-250uA
ID=-250uA
1.18
1.0
1.09
0.9
1.00
0.8
0.91
0.7
6
0.6
0.82
0.5
-50 -25 0 25 50 75 100 125 150
0.73
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
30
ID=-24A
25
20
125 C
15
10
75 C
5
25 C
0
0
2
4
6
8
10
V G S , G ate-S ource Voltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
20.0
125 C
10.0
5.0
75 C
25 C
1.0
0
0.3 0.6 0.9 1.2 1.5
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4