STBP423S Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for extremely low R DS (ON).

STB/P423S
P-Channel ELECTRICAL CHARACTERISTICS
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
5
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
O₅FF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS ^VGS =0V, ^ID =250uA -40
IDSS
VDS =-32V, VGS= 0V
V
-1 uA
Gate-Body Leakage
ON CHARACTERISTICS ^b
IGSS
VGS ₌ 20V,VDS=0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1.0 -1.8 -3.0 V
Drain-S ource On-S tate R esistance R DS(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
VGS =-10V, ID= -24A
VGS =-4.5V, ID= -12A
VDS = -10V, ID = -10A
VDS =-20V, VGS = 0V
f =1.0MHZ
VDD = -24V
ID = -24 A
VGS = -10V
R GEN = 3.3 ohm
7.5 ^9.5 m ohm
10 12.5 m ohm
25
S
4210
PF
650
PF
380
PF
68
ns
105
ns
230
ns
96
ns
Total Gate Charge
VDS =-24V, ID =-24A,VGS =-10V
94
nC
Qg
VDS =-24V, ID =-24A,VGS =-4.5V
48
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs _{VDS =-24V, ID = -24A}
Qgd VGS =-10V
9.5
nC
25.2
nC
2