SP2013 Datasheet, PDF (5/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2013
Ver 1.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = -4.25 A
40
VGS = -2.5 V
-3.1 V
30
-3.7 V
-4.0 V
-4.5 V
20
10
0
-50
0
50
100
150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
td(off)
100
tr
tf
td(on)
10
VDD = -16.0 V
VGS = -4.5 V
RG = 6 Ω
1
0.1
1
10
-ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.3 0.6 0.9 1.2 1.5 1.8
-VF(S-D) - Source to Drain Voltage - V
5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1
10
100
-VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
VDD = -4 V
-10 V
3
-16 V
2
1
ID = -8.5 A
0
0
5
10
15
20
25
QG - Gate Charge -nC
Jul,18,2013
www.samhop.com.tw