SP2013 Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2013
Ver 1.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
R^{DS(ON) Limit}
10us
100us
1
0.1 _VGS=-4.5V
Single Pulse
TA=25 C
0.01
0.1
1
1ms
10ms
1s
10s
DC
10
-VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2
Mounted on FR-4 board of
1 inch² , 2oz
1.5
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Mounted on FR-4 board of
1 inch² , 2oz
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
PW - Pulse Width - s
3
100
1000
Jul,18,2013
www.samhop.com.tw