SP2013 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
SP2013
Ver 1.1
PRODUCT SUMMARY
VDSS
-20V
ID
-8.5A
RDS(ON) (mΩ) Max
20 @ VGS=-4.5V
21 @ VGS=-4.0V
22 @ VGS=-3.7V
25 @ VGS=-3.1V
28 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
Pin 1
TSON 3.3 x 3.3
D5
D6
D⁷
D8
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^{a d}
TA=25°C
T_A=70°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
T_J, T_STG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1_S
Limit
-20
±12
-8.5
-6.8
-49
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,18,2013
www.samhop.com.tw