SP2013 Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2013
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-16V , VGS=0V
VGS= ±12V , VDS=0V
-20
V
-1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=-1.0mA
VGS=-4.5V , ID=-4.25A
VGS=-4.0V , ID=-4.25A
VGS=-3.7V , ID=-4.25A
VGS=-3.1V , ID=-4.25A
VGS=-2.5V , ID=-4.25A
VDS=-10V , ID=-4.25A
VDS=-10V,VGS=0V
f=1.0MHz
VDD=-16V
ID=-4.25A
VGS=-4.5V
RGEN= 6 ohm
VDS=-16V,ID=-8.5A,
VGS=-4.5V
-0.5 -0.9
12 16
12.5 16.5
13 17
14 19
18 22
25
-1.3 V
20 m ohm
21 m ohm
22 m ohm
25 m ohm
28 m ohm
S
1860
pF
300
pF
258
pF
39
ns
81
ns
126
ns
58
ns
23
nC
1.8
nC
9.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-8.5A
-0.85 -1.2 V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
Jul,18,2013
2
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