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| SCT2160KE Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2160KE
ï¬Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
0.6
Ta=25ºC
0.5
Pulsed
0.4
0.3
ID = 15A
0.2
ID = 7A
0.1
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.4
VGS= 18V
0.35 Plused
0.3
0.25
0.2
ID = 15A
0.15
0.1
ID = 7A
0.05
0
-50
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS= 18V
Plused
Ta=150ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= ï25ºC
0.1
0.1
1
10
100
Drain Current : ID [A]
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8/12
2017.07 - Rev.D
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