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| SCT2160KE Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2160KE
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
250
Ta = 25ºC
ID= 7A
200
VGS = 18V/0V
RG= 0ï
L=500ïH
150
Eon
100
Eoff
50
0
0
200 400 600 800 1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
800
700
Ta = 25ºC
VDD= 600V
VGS = 18V/0V
600
RG= 0ï
Eon
L=500ïH
500
400
300
Eoff
200
100
0
0
5
10
15
20
25
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
350
Ta = 25ºC
300 VDD= 600V
ID= 7A
250
VGS = 18V/0V
Eon
L=500ïH
200
150
Eoff
100
50
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
10/12
2017.07 - Rev.D
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