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SCT2160KE Datasheet, PDF (7/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2160KE
Electrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
10
VDS= 10V
Plused
1
0.1
0.01
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.001
0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Datasheet
Fig.9 Typical Transfer Characteristics (II)
20
18 VDS= 10V
Plused
16
14
12
10
8
6
Ta=150ºC
Ta=75ºC
4
Ta=25ºC
Ta= 25ºC
2
0
0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
5
4.5
VDS = 10V
ID = 3mA
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
50 100 150 200
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
10
VDS= 10V
Plused
1
0.1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.01
0.01
0.1
1
10
Drain Current : ID [A]
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