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| SCT2160KE Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2160KE
ï¬Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Static drain - source
on - state resistance
Gate input resistance
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
VGS = 18V, ID = 7A
RDS(on) *4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
gfs *4 VDS = 10V, ID = 7A
Ciss
VGS = 0V
Coss VDS = 800V
Crss f = 1MHz
Co(er)
VGS = 0V
VDS = 0V to 500V
td(on) *4
tr *4
td(off) *4
tf *4
VDD = 400V, ID = 7A
VGS = 18V/0V
RL = 57ï
RG = 0ï
Eon *4
Eoff *4
VDD = 600V, ID=7A
VGS = 18V/0V
RG = 0ï, L=500ïH
*Eon includes diode
reverse recovery
Datasheet
Values
Unit
Min. Typ. Max.
-
160 208 mï
-
226
-
-
13.7
-
ï
-
2.4
-
S
-
1200
-
-
45
-
pF
-
7
-
-
71
-
pF
-
23
-
-
25
-
ns
-
67
-
-
27
-
-
126
-
ïJ
-
55
-
ï¬Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *4 VDD = 400V
Qgs *4
Qgd *4
ID = 7A
VGS = 18V
V(plateau) VDD = 400V, ID = 7A
Values
Unit
Min. Typ. Max.
-
62
-
-
14
-
nC
-
20
-
-
9.6
-
V
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© 2013 ROHM Co., Ltd. All rights reserved.
3/12
2017.07 - Rev.D
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