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| SCT2160KE Datasheet, PDF (11/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2160KE
ï¬Electrical characteristic curves
Datasheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS=0V
Pulsed
10
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta=25ºC
di / dt = 160A / ïs
VR = 400V
VGS = 0V
Pulsed
1
100
0.1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= ï25ºC
0.01
012345678
Source - Drain Voltage : VSD [V]
10
1
10
100
Inverse Diode Forward Current : IS [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
11/12
2017.07 - Rev.D
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