 English |
|
|
|
|
|
|
|
| SCTMU001F_17 Datasheet, PDF (7/10 Pages) Rohm – N-channel SiC power MOSFET | |||
| |||
| ◁ |
SCTMU001F
ï¬Electrical characteristic curves
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
10000
Ciss
1000
Coss
100
Ta = 25ºC
f = 1MHz
VGS = 0V
10
0.1
1
Crss
10
100
1000
Drain - Source Voltage : VDS [V]
Datasheet
Fig.13 Dynamic Input Characteristics
20
Ta = 25ºC
VDD =200V
ID = 5A
15 Pulsed
10
5
0
0 10 20 30 40 50 60
Total Gate Charge : Qg [nC]
Fig.14 Switching Characteristics
1000
tf
100
td(off)
Ta = 25ºC
VDD = 300V
VGS = 18V
RG = 0â¦
Pulsed
10
0.1
td(on)
tr
1
10
100
Drain Current : ID [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
7/8
2017.07 - Rev.D
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese