SCTMU001F_17 Datasheet, PDF (4/10 Pages) Rohm – N-channel SiC power MOSFET

SCTMU001F
Electrical characteristic curves
Datasheet
Fig.1 Power Dissipation Derating Curve
140
120
100
80
60
40
20
0
0
50
100
150
200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
1000
100
Operation in this
area is limited by R_DS(ON)
P_W =100s
P_W = 1ms
P_W = 10ms
P_W =100ms
10
1
T_a = 25ºC
Single Pulse
0.1
1
10
100
1000
Drain - Source Voltage : V_DS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
0.0001 0.001 0.01
T_a = 25ºC
Single Pulse
0.1
1
10
Pulse Width : PW [s]
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2017.07 - Rev.D