SCTMU001F_17 Datasheet, PDF (5/10 Pages) Rohm – N-channel SiC power MOSFET

SCTMU001F
Electrical characteristic curves
Fig.4 Typical Output Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
V_GS= 18V
V_GS= 16V
V_GS= 14V
T_a = 25ºC
Pulsed
V_GS= 12V
V_GS= 10V
V_GS= 8V
V_GS= 6V
2 4 6 8 10 12 14 166V
Drain - Source Voltage : V_DS [V]
Datasheet
Fig.5 Tj = 150°C Typical Output
Characteristics
20
18
16
V_GS = 18V
V_GS = 16V
V_GS = 14V
T_a = 150ºC
Pulsed
14
V_GS = 12V
12
V_GS = 10V
10
V_GS = 8V
8
V_GS = 6V
V_GS = 4V
6
4
2
0
0 2 4 6 8 10 12 14 16
Drain - Source Voltage : V_DS [V]
Fig.6 Typical Transfer Characteristics
10
V_DS = 10V
Pulsed
1
0.1
0.01
T_a= 150ºC
T_a= 75ºC
T_a= 25ºC
T_a= -25ºC
0.001
0
2
4
6
8
10
Gate - Source Voltage : V_GS [V]
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
4
3.5
V_DS = 10V
I_D = 3mA
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Junction Temperature : T_j [°C]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/8
2017.07 - Rev.D