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| SCTMU001F_17 Datasheet, PDF (1/10 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCTMU001F
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
400V
120mï
20A
132W
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
ï¬Application
ã»Audio
ï¬Outline
TO220AB
(1) (2) (3)
ï¬Inner circuit
(2)
(1) Gate
(2) Drain
*1
(3) Source
(1)
*1 Body Diode
(3)
ï¬Packaging specifications
Packing
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
50
Packing code
C
Marking
SCTMU001F
ï¬Absolute maximum ratings (Ta = 25ï°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25ï°C
Pulsed drain current
Gate - Source voltage
Power dissipation (Tc = 25ï°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
400
V
ID *1
20
A
ID,pulse *2
60
A
VGSS
-6 to 22
V
PD
132
W
Tj
150
ï°C
Tstg
-55 to ï«150
ï°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/8
2017.07 - Rev.D
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