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| SCTMU001F_17 Datasheet, PDF (6/10 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCTMU001F
ï¬Electrical characteristic curves
Datasheet
Fig.8 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.5
Ta = 25ºC
Pulsed
0.4
0.3
0.2
0.1
ID = 10A
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.9 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.3
0.25
VGS = 18V
Pulsed
0.2
0.15
ID = 20A
0.1
0.05
ID = 10A
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
Fig.11 Transconductance vs. Drain Curren
10
VDS = 10V
Pulsed
Ta = 150ºC
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.1
1
10
100
Drain Current : ID [A]
0.1
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
10
Drain Current : ID [A]
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6/8
2017.07 - Rev.D
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