BD95513MUV_10 Datasheet, PDF (3/18 Pages) Rohm – Switching Regulator with MOS FET for DDR-SDRAM Cores

BD95513MUV
Technical Note
●Electrical Characteristics
(Unless otherwise noted, T_a =25℃, AV_IN =12V, V_CC =V_DD =V_REG, EN/CTL=5V, MODE=0V, R_FS =180kΩ)
Parameter
Symbol
Limits
Unit
Min. Typ. Max.
Condition
[Whole Device]
AV_IN Bias Current 1
I_IN1
-
1200 1800 µA
AV_IN Bias Current 2
I_IN2
-
150 250
µA EXTV_CC=5V
AV_IN Standby Current
EN Low Voltage
I_INstb
-
0
ENlow GND
-
10
µA CTL=EN=0V
0.8
V
EN High Voltage
ENhigh
2.3
-
5.5
V
EN Bias Voltage
I_EN
-
12
20
µA
CTL Low Voltage
CTLlow GND
-
0.8
V
CTL High Voltage
CTLhigh 2.3
-
5.5
V
CTL Bias Current
[5V Regulator]
V_REG Input Voltage
Maximum Current
[5V Switch]
EXTV_CC Input Threshold Voltage
I_CTL
V_REG
I_REG
EV_CC__UVLO
-
4.90
100
4.2
1
5.00
-
4.4
6
5.10
-
4.6
µA
V
V_IN=6.0 to 25V
I_REG=0 to 100mA
mA
V EXTV_CC:Sweep up
Switch Resistance
R_EVCC
-
1.0
2.0
[Under-Voltage Lockout Protection]
AV_IN Threshold Voltage
AV_{IN _ UVLO}
4.1
4.3
4.5
Ω
V V_CC:Sweep up
AV_IN Hysteresis Voltage
V_REG Threshold Voltage
dAV_{IN _ UVLO} 100
160
220
mV V_CC:Sweep down
V_{REG_ UVLO}
4.1
4.3
4.5
V V_REG:Sweep up
V_REG Hysteresis Voltage
[H³REG^TM Control Block]
ON Time
dV_{REG_ UVLO} 100
160
220
mV V_REG:Sweep down
ton
400 500 600 nsec
MAX ON Time
tonmax 10.0 22.0 40.0 µsec
MIN OFF Time
[FET Block]
High-side ON Resistance
toffmin
-
450 550 nsec
Ron_high
-
120 200 mΩ
Low-side ON Resistance
[SCP Block]
SCP Startup Voltage
Delay
Ron_low
-
120 200 mΩ
V_SCP
t_SCP
0.420 0.490 0.560
-
1
-
V When V_FB: 30% down
ms
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3/17
2010.10- Rev.A