BD95513MUV_10 Datasheet, PDF (2/18 Pages) Rohm – Switching Regulator with MOS FET for DDR-SDRAM Cores

BD95513MUV
Technical Note
●Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Ratings
Unit
Input Voltage 1
Input Voltage 2
Input Voltage 3
External V_CC Voltage
BOOT Voltage
BOOT-SW Voltage
V_CC
V_DD
V_IN
EXTV_CC
7 ^*1
V
7 ^*1
V
30 ^*1
V
7 ^*1
V
BOOT
35
V
BOOT-SW
7 ^*1
V
Output Feedback Voltage
FB
V_CC
V
SS/FS/MODE Voltage
SS/FS/MODE
V_CC
V
V_REG Voltage
EN/CTL Input Voltage
V_REG
EN/CTL
V_CC
V
7 ^*1
V
PGOOD Voltage
PGOOD
7 ^*1
V
Output Current (Average)
I_SW
Power Dissipation 1
P_d1
Power Dissipation 2
P_d2
Power Dissipation 3
P_d3
Power Dissipation 4
P_d4
3 ^*1
A
0.38 ^*2
W
0.88 ^{*3 *6}
W
2.06 ^{*4 *6}
W
4.56 ^{*5 *6}
W
Operating Temperature Range
T_opr
-10 ~ +100
℃
Storage Temperature Range
T_stg
-55 ~ +150
℃
Junction Temperature
T_jmax
+150
℃
*1 Do not exceed Pd.
*2 Ta ≧ 25 ℃ (IC only),
power dissipated at 3.0 mW/℃.
*3 Ta ≧ 25 ℃ (single-layer board, 20.2 mm² copper heat dissipation pad),
power dissipated at 7.0 mW/℃.
*4 Ta ≧ 25 ℃ (4-layer board, 10.29 mm² copper heat dissipation pad on top layer, 5505 mm² pad on 2nd and 3rd layer),
power dissipated at 16.5 mW/℃.
*5 Ta ≧ 25 ℃ (4-layer board, all layers with 5505 mm² copper heat dissipation pads),
power dissipated at 36.5 mW/℃.
*6 Values observed with chip backside soldered.
When unsoldered, power dissipation is lower.
●Operating Conditions (Ta = 25℃)
Parameter
Symbol
Ratings
Unit
Min
Max
Input Voltage 1
V_CC
4.5
5.5
V
Input Voltage 2
Input Voltage 3
V_DD
4.5
5.5
V
V_IN
4.5
28
V
External V_CC Voltage
BOOT Voltage
EXTV_CC
4.5
BOOT
4.5
5.5
V
33
V
SW Voltage
SW
-0.7
28
V
BOOT-SW Voltage
BOOT-SW
4.5
5.5
V
MODE Input Voltage
MODE
0
5.5
V
EN/CTL Input Voltage
EN/CTL
0
5.5
V
PGOOD Voltage
PGOOD
0
5.5
V
Minimum On Time
t_onmin
-
★This product is not designed for use in a radioactive environment.
100
ns
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© 2010 ROHM Co., Ltd. All rights reserved.
2/17
2010.10- Rev.A