English
Language : 

BD95513MUV_10 Datasheet, PDF (15/18 Pages) Rohm – Switching Regulator with MOS FET for DDR-SDRAM Cores
BD95513MUV
Technical Note
●Notes for use
(1) Absolute maximum ratings
Exceeding the absolute maximum ratings (such as supply voltage, temperature range, etc.) may result in damage to the
device. In such cases, it may be impossible to identify problems such as open circuits or short circuits.
If any operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry
(such as fuses) to eliminate the risk of damaging the IC.
(2) Power supply polarity
Connecting the power supply in reverse polarity can cause damage to the IC.
Take precautions when connecting the power supply lines. An external power diode can be added.
(3) Power supply lines
The PCB layout pattern should be designed to provide the IC with low-impedance GND and supply lines.
To minimize noise on the supply and GND lines, ground and power supply lines of analog and digital blocks should be
separated. For all power lines supplying ICs, connect a bypass capacitor between the power supply and the GND
terminal. If using electrolytic capacitors, keep in mind that their capacitance is reduced at lower temperatures.
(4) GND voltage
The potential of the GND pin must be the minimum potential in the system in all operating conditions.
(5) Thermal design
Use thermal design techniques that allow for a sufficient margin for power dissipation in actual operating conditions.
(6) Inter-pin shorts and mounting errors
Use caution when positioning he IC for mounting on PCBs. The IC may be damaged if there are any connection errors or
if pins are shorted together.
(7) Operation in strong electromagnetic fields
Exercise caution when using the IC in the presence of strong electromagnetic fields as doing so may cause
the IC to malfunction.
(8) ASO
When using the IC, set the output transistor so that it does not exceed either absolute maximum ratings or ASO.
(9) Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit), which is designed to shut down the IC only to prevent
thermal overloading. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC
if this circuit is activated, or in environments in which activation of this circuitry can be assumed.
BD95513MUV
TSD ON Temp. [℃] (typ.)
175
Hysteresis Temp. [℃] (typ.)
15
(10) Testing on application boards
When testing the IC with application boards, connecting capacitors directly to low-impedance terminals can subject the IC
to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should be turned
off completely before connecting it to or removing it from a jig or fixture during the evaluation process. To prevent
damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
15/17
2010.10- Rev.A