BU9833GUL-W Datasheet, PDF (2/13 Pages) Rohm – Silicon Monolithic Integrated Circuit

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◇RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
1.7～5.5
V
Input Voltage
VIN
0～VCC
V
◇DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40～85℃､VCC=1.7～5.5V)
Parameter
“H” Input Voltage1
“L” Input Voltage1
“H” Input Voltage2
“L” Input Voltage2
“H” Input Voltage3
“L” Input Voltage3
“L” Output Voltage1
“L” Output Voltage2
Specification
Symbol
Unit
min. typ. max.
test condition
VIH1 0.7VCC － VCC+1.0 V 2.5V≦Vcc≦5.5V
VIL1 -0.3 － 0.3VCC V 2.5V≦Vcc≦5.5V
VIH2 0.8VCC － VCC+1.0 V 1.8V≦Vcc＜2.5V
VIL2 -0.3 － 0.2VCC V 1.8V≦Vcc＜2.5V
VIH3 0.9VCC － VCC+1.0 V 1.7V≦Vcc＜1.8V
VIL3 -0.3 － 0.1VCC V 1.7V≦Vcc＜1.8V
VOL1 － － 0.4 V IOL=3.0mA，2.5V≦Vcc≦5.5V （SDA）
VOL2 － － 0.2 V IOL=0.7mA，1.7V≦Vcc＜2.5V （SDA）
Input Leakage Current
ILI
-1 －
1 μA VIN=0V～VCC
Output Leakage Current ILO
-1 －
1 μA VOUT=0V～VCC (SDA)
Operating Current
VCC=5.5V,fSCL=400ｋHz,tWR=5ms
ICC1
－ － 2.0 mA _{Byte Write}
Page Write
VCC=5.5V,fSCL=400ｋHz
ICC2
－ － 0.5 mA ^{Random Read}
Current Read
Sequential Read
Standby Current
VCC=5.5V,SDA,SCL=VCC
ISB
－ － 2.0 μA
A0,A1,A2=GND,WP=GND
○ This product is not designed for protection against radioactive rays.
◇MEMORY CELL CHARACTERISTICS (Ta=25℃、VCC＝1.7～5.5V)
Prameter
Specification
Unit
Min.
Typ.
Max.
Write/Erase Cycle
*1 1,000,000
-
-
Cycles
Data Retention
*1
40
-
-
Years
*1 Not 100% TESTED
REV. A