BU9833GUL-W Datasheet, PDF (1/13 Pages) Rohm – Silicon Monolithic Integrated Circuit

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◇STRUCTURE
◇PRODUCT
◇PART NUMBER
◇PHYSICAL DIMENSION
◇BLOCK DIAGRAM
◇USE
Silicon Monolithic Integrated Circuit
256×8 bit Electrically Erasable PROM
BU9833GUL-W
Fig.-1
Fig.-2
General purpose
◇FEATURES
・ 256 registers × 8 bits serial architecture
・Single power supply (1.7V～5.5V)
・Two wire serial interface
・Self-timed write cycle with automatic erase
・8 byte Page Write mode
・Low power consumption
Write ( 5V ) : 1.2mA (Typ.)
Read ( 5V ) : 0.2mA (Typ.)
Standby ( 5V ) : 0.1μA(Typ.)
・DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
・WLCSP6Pin package ------ VCSP50L1
・High reliability fine pattern CMOS technology
・Endurance : 1,000,000 erase/write cycles
・Data retention : 40 years
・Filtered inputs in SCL・SDA for noise suppression
・Initial data FFh in all address
◇ ABSOLUTE MAXIMUM RATING (Ta=25℃)
Parameter
Supply Voltage
Symbol
VCC
Rating
Unit
-0.3～6.5
V
Power Dissipation
Ｐｄ
VCSP50L1
220 *1 mW
Storage Temperature
Tstg
-65～125
℃
Operating Temperature
Topr
-40～85
℃
Terminal Voltage
－
-0.3～VCC+1.0 *2
V
*1 Degradation is done at 2.2mW/℃ for operation above 25℃.
*2 The max value of Terminal Voltage is not over 6.5V.
REV. A