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BU9829GUL-W_10 Datasheet, PDF (2/17 Pages) Rohm – WL-CSP EEPROM family SPI BUS | |||
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BU9829GUL-W
Technical Note
âMemory cell characteristics (Ta=25â, Vcc1=1.6ï½3.6V)
Parameter
Write/Erase Cycle *1
Data Retention *1
Min.
100,000
10
Limits
Typ.
ï¼
ï¼
Max.
ï¼
ï¼
Unit
Cycle
Year
*1 : Not 100% tested
âInput/output capacity (Ta=25â, Frequency=5MHz)
Parameter
Symbol
Conditions
Limits
Min. Max.
Unit
Input Capacitance *1 CIN VIN=GND ï¼ 8 pF
Output Capacitance*1 COUT VOUT=GND ï¼ 8 pF
*1:Not 100% TESTED
âEEPROM DC operating characteristics (Unless otherwise specified, Ta=-30ï½85â, Vcc1=1.6ï½3.6V)
Parameter
Symbol Min.
Limits
Typ.
Max. Unit
Test condition
"H" Input Voltage1
VIH1 0.7xVcc1 ï¼ Vcc1+0.3 V 2.5â¦Vcc1â¦3.6V
"H" Input Voltage2
VIH2 0.75xVcc1 ï¼ Vcc1+0.3 V 1.6â¦Vcc1ï¼2.5V
"L" Input Voltage1
VIL1
-0.3
ï¼ 0.3xVcc1 V 2.5Vâ¦Vcc1â¦3.6V
"L" Input Voltage2
VIL2
-0.3
ï¼ 0.25xVcc1 V 1.6Vâ¦Vcc1ï¼2.5V
"L" Output Voltage1
VOL1
0
ï¼
0.2
V IOL=1.0mA , 2.5Vâ¦Vcc1â¦3.6V
"L" Output Voltage2
VOL2
0
ï¼
0.2
V IOL=1.0mA , 1.6Vâ¦Vcc1ï¼2.5V
"H" Output Voltage1
VOH1 Vcc1-0.2
ï¼
Vcc1
V IOH=-0.4mA , 2.5Vâ¦Vcc1â¦3.6V
"H" Output Voltage1
VOH2 Vcc1-0.2
ï¼
Vcc1
V IOH=-100µA , 1.6Vâ¦Vcc1ï¼2.5V
Input Leakage Current
ILI
-1
ï¼
1
µA VIN=0ï½Vcc1
Output Leakage Current ILO
-1
ï¼
1
µA VOUT=0ï½Vcc1 , CSB=Vcc1
ICC1
ï¼
Operating Current Write
ICC2
ï¼
ï¼
ï¼
1.5
mA
Vcc1=1.8V , fSCK =2MHz, tE/W=5ms
Byte Write, Page Write, Write Status Register
2.0
mA
Vcc1=2.5V , fSCK =5MHz,tE/W=5ms
Byte Write, Page Write, Write Status Register
ICC3
ï¼
Operating Current Read
ICC4
ï¼
ï¼
ï¼
0.2
mA
Vcc1=1.8V , fSCK=2MHz , SO=OPEN
Read, Read Status Register
0.6
mA
Vcc1=2.5V , fSCK=5MHz,SO=OPEN
Read, Read Status Register
Standby Current
ISB
ï¼
ï¼
1.0
µA
Vcc1=3.6V , CSB=Vcc1 , SCK ,
SI=Vcc1/GND ,SO=OPEN
âThis product is not designed for protection against radioactive rays.
âEEPROM AC operating characteristics (Ta=-30ï½85â)
Parameter
Symbol
1.6â¦VCC1ï¼1.8V
Min.
Typ.
Max.
SCK clock Frequency
fSCK
ï¼
ï¼
2.5
SCK High Time
tSCKWH
200
ï¼
ï¼
SCK Low Time
tSCKWL
200
ï¼
ï¼
CSB High Time
tCS
200
ï¼
ï¼
CSB Setup Time
tCSS
150
ï¼
ï¼
CSB Hold Time
tCSH
150
ï¼
ï¼
SCK Setup Time
tSCKS
50
ï¼
ï¼
SCK Hold Time
tSCKH
50
ï¼
ï¼
SI Setup Time
tDIS
50
ï¼
ï¼
SI Hold Time
tDIH
50
ï¼
ï¼
Output Data Delay Time
tPD
ï¼
ï¼
100
Output Hold Time
tOH
0
ï¼
ï¼
Outuput Disable Time
*1
tOZ
ï¼
ï¼
200
SCK Rise Time
*1
tRC
ï¼
ï¼
1
SCK Fall Time
*1
tFC
ï¼
ï¼
1
Output Rise Time
*1
tRO
ï¼
ï¼
50
Output Fall Time
*1
tFO
ï¼
ï¼
50
Write Cycle Time
tE/W
ï¼
ï¼
5
Wait Time From Vcc1 ON To
EEPROM Command
tON
15
ï¼
ï¼
*1 : Not 100% tested
1.8â¦VCC1â¦3.6V
Min.
Typ.
Max.
ï¼
ï¼
5
80
ï¼
ï¼
80
ï¼
ï¼
90
ï¼
ï¼
60
ï¼
ï¼
60
ï¼
ï¼
50
ï¼
ï¼
50
ï¼
ï¼
20
ï¼
ï¼
20
ï¼
ï¼
ï¼
ï¼
80
0
ï¼
ï¼
ï¼
ï¼
80
ï¼
ï¼
1
ï¼
ï¼
1
ï¼
ï¼
50
ï¼
ï¼
50
ï¼
ï¼
5
15
ï¼
ï¼
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
ms
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© 2010 ROHM Co., Ltd. All rights reserved.
2/16
2010.09 - Rev.A
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