RF5410 Datasheet, PDF (3/33 Pages) RF Micro Devices – LTE MMMB PA Module

RFMD + TriQuint = Qorvo
Nominal Operating Parameters
Parameter
Specification
Unit
Min
Typ
Max
Condition
General Requirements
Supply Voltage, VBATT
3.1
3.8
4.6
V
See Note 1
Supply Voltage, VCC1, VCC2
0.5
3.4
4.6
V
See Note 1
Supply Voltage, VIO
1.65
1.8
1.95
V
MIPI RFFE logic low
(SCLK, SDATA)
0
0.3*VIO
V
MIPI RFFE logic high
(SCLK, SDATA)
0.7*VIO
VIO
V
VIO Rise Time
0.1
450
µS
Required for device reset
Current (MIPI Digital Inputs)
50
µA
Leakage Current
10
µA
Operating Ambient Temperature (TA)
-20
25
+85
°C
Note 1:
VCC down to 0.5V may be used for backed-off power levels when using a DC-DC converter to reduce low power current drain.
For operation at VBATT = 3.1V, de-rate Max POUT by 1.0dB if VCC also equals 3.1V.
The LPM switch point is recommended at +13.5dBm.
LPM can be operated at higher power levels with different bias states and VCC.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS20160809
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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