RF5410 Datasheet, PDF (20/33 Pages) RF Micro Devices – LTE MMMB PA Module

Parameter
MB: Band 34, 39
HB: Band 40
TD-SCDMA
P.2
Harmonics, 2fo
Harmonics, 3fo
Harmonics, 4fo and higher
Input VSWR
Gain Switching Time
Insertion Phase Shift
Stability, Spurious Output Levels
Ruggedness
RFMD + TriQuint = Qorvo
Specification
Min
Typ
Max
Unit
Condition
Nominal test conditions unless otherwise stated.
All unused ports terminated in 50Ω.
TA=+25°C; VBATT=3.8V; VCC=3.4V; Mode=HPM.
Modulation: TD-SCDMA
-33
dBc
POUT = Pmax; VCC = 3.4V
-42
dBc
POUT = Pmax; VCC = 3.4V
-60
dBc
POUT = Pmax; VCC = 3.4V
2:1
VSWR No External matching
10
µS
Time required for output power to settle to within ±1dB of
the
5
°
Phase shift at 13.5dBm when switching from HPM to
LPM
Output Load VSWR = 6:1, All phase angles
-70
dBc
PIN ≤ 10dBm, PFWD ≤ Max Pout
Temp -20 to +85C, Vbatt = Vcc = 3.0 to 4.6V
No damage or permanent degradation to device
Output Load VSWR = 10:1, All phase angles
PFWD ≤ Max Pout, Closed Loop Conditions
Temp -20 to +85C, Vbatt = Vcc = 4.6V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS20160809
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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