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RF5410 Datasheet, PDF (16/33 Pages) RF Micro Devices – LTE MMMB PA Module
Parameter
MB: Band 39
TDD – LTE
P.2
Harmonics, 2fo
Harmonics, 3fo
Harmonics, 4fo and higher
Input VSWR
Gain Switching Time
Insertion Phase Shift
Stability, Spurious Output Levels
Ruggedness
RFMD + TriQuint = Qorvo
Specification
Unit
Min
Typ
Max
-44
dBc
-40
dBc
-51
dBc
2:1
VSWR
10
µS
5
°
-70
dBc
No damage or permanent degradation to device
Condition
Nominal test conditions unless otherwise stated.
All unused ports terminated in 50Ω.
TA=+25°C; VBATT=3.8V; VCC=3.4V;Mode=HPM.
Modulation: QPSK, 10MHz BW, 12 RB
HPM, Pout = 27.0dBm, VCC = 3.4V
Modulation: 10MHz, QPSK, 1RB
HPM, Pout = 27.0dBm, VCC = 3.4V
Modulation: 10MHz, QPSK, 1RB
HPM, Pout = 27.0dBm, VCC = 3.4V
Modulation: 10MHz, QPSK, 1RB
No External matching
Time required for output power to settle to within ±1dB of
the final output power for any gain mode transition.
Phase shift at 13.5dBm when switching from HPM to
LPM
Output Load VSWR = 6:1, All phase angles
PIN ≤ 10dBm, PFWD ≤ Max Pout
Temp -20 to +85C, Vbatt = Vcc = 3.0 to 4.6V
Output Load VSWR = 10:1, All phase angles
PFWD ≤ Max Pout, Closed Loop Conditions
Temp -20 to +85C, Vbatt = Vcc = 4.6V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS20160809
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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