HAT3010R_15 Datasheet, PDF (9/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3010R
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25°C
5
25°C
75°C
2
1
V_DS = –10 V
Pulse Test
0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
Crss
20 ^VGS ^{= 0}
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
td(off)
tr
30
td(on)
10
tf
3 _{VGS = –10 V, VDD = –30 V}
PW = 5 µs, duty ≤ 1 %
1
–0.1 –0.3 –1 –3 –10 –30
–100
Drain Current I_D (A)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –10 V
–25 V
–20
–50 V
–4
–40
V_GS
–8
V_DS
–60
V_DD = –10 V
–12
–25 V
–80
–50 V
–16
I_D = –5 A
–100
0
8
16 24 32
Gate Charge Qg (nc)
–20
40
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
–8
–10 V
–6
–5 V
–4
V_GS = 0, 5 V
–2
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Rev.10.00 Sep 07, 2005 page 7 of 9