HAT3010R_15 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3010R
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
V_DS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
Crss
20 ^VGS ^{= 0}
f = 1 MHz
10
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 10 V, V_DD = 30 V
PW = 5 µs, duty ≤ 1 %
300
100
td(off)
30
td(on)
tr
10
tf
3
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 6 A
80
16
V_DD = 50 V
25 V
60
10 V
12
V_DS
V_GS
40
8
20
V_DD = 50 V
4
25 V
10 V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8 ^{10 V}
6
5V
4
V_GS = 0, –5 V
2
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Rev.10.00 Sep 07, 2005 page 5 of 9