HAT3010R_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3010R
Main Characteristics
N Channel
Maximum Safe Operation Area
100
10
1
0.1
DC
Operation in
this area is
PW
Operation
1
= ₁₀
(PW
m1s00^1µ0sµs
ms
≤ ₁₀^N_so_{)te 6}
limited by R_{DS (on)}
0.01
Ta = 25°C
1 shot Pulse
0.001
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
Tc = 75°C
2
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
0.02
0.01
1
V_GS = 4.5 V
10 V
3
10
30
100
Drain Current I_D (A)
Rev.10.00 Sep 07, 2005 page 4 of 9
Typical Output Characteristics
10
10 V
4V
8
3V
Pulse Test
6
4
2
2.5 V
V_GS = 2 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
300
Pulse Test
200
I_D = 5 A
100
2A
1A
0
0
5
10
15
20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
1 A, 2 A
I_D = 5 A
0.04 _{VGS = 4.5 V}
0.02
1 A, 2 A, 5 A
10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)