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HAT3010R_15 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching | |||
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HAT3010R
P Channel
Maximum Safe Operation Area
â100
â10
â1
â0.1
DC
Operation in
this area is
OperPatWion=(P1W0 mâ¤11s1m000sN1soµ0)tesµ7s
limited by RDS (on)
â0.01
Ta = 25°C
1 shot Pulse
â0.001
â0.1 â0.3 â1 â3 â10 â30 â100
Drain to Source Voltage VDS (V)
Note 7:
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
Typical Transfer Characteristics
â10
VDS = â10 V
Pulse Test
â8
â6
â4
â2
Tc = 75°C
25°C
â25°C
0
0
â1 â2 â3 â4 â5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 VGS = â4.5 V
0.05
â10 V
0.02
0.01
â1
â3
â10 â30
Drain Current ID (A)
â100
Rev.10.00 Sep 07, 2005 page 6 of 9
Typical Output Characteristics
â10
â10 V
â8
â6 V
â4.5 V
Pulse Test
â3.5 V
â6
â4
â3 V
â2
VGS = â2.5 V
0
0
â2 â4 â6 â8 â10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
â1.0
Pulse Test
â0.8
â0.6
â0.4
ID = â5 A
â0.2
0
0
â2 A
â1 A
â5
â10
â15
â20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.15
0.10
ID = â1 A, â2 A
VGS = â4.5 V
â5 V
â5 V
0.05
â1 A, â2 A
â10 V
0
â40 0
40 80 120 160
Case Temperature Tc (°C)
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