HAT3010R_15 Datasheet, PDF (5/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3010R
P Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 5. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–60
±20
—
—
–1.0
—
—
3
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
60
90
5
1350
135
85
20
15
55
10
–0.85
50
Max
—
—
±10
–1
–2.5
76
130
—
—
—
—
—
—
—
—
–1.10
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –2.5 A, VGS = –10 V ^{Note 5}
ID = –2.5 A, VGS = –4.5 V ^{Note 5}
ID = –2.5 A, VDS = –10 V ^{Note 5}
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V, ID = –2.5 A
VDD ≅ –30 V
RL = 12 Ω
Rg = 4.7 Ω
IF = –5 A, VGS = 0 ^{Note 5}
IF = –5 A, VGS = 0
diF/dt = 100 A/µs
Rev.10.00 Sep 07, 2005 page 3 of 9