H8S2639 Datasheet, PDF (861/1547 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series

Section 21B ROM (H8S/2638 Group, H8S/2639 Group, H8S/2630 Group)
21B.4 Flash Memory Overview
21B.4.1 Features
The H8S/2638 and H8S/2639 have 256 kbytes of on-chip flash memory, or 256 kbytes of on-chip
mask ROM. The H8S/2630 has 384 kbytes of on-chip flash memory, or 384 kbytes of on-chip
mask ROM. The features of the flash memory are summarized below.
• Four flash memory operating modes
 Program mode
 Erase mode
 Program-verify mode
 Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
• Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent to 80 µs (typ.) per byte, and the erase time is 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
 Boot mode
 User program mode
• Automatic bit rate adjustment
With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are three protect modes, hardware, software, and error protection, which allow protected
status to be designated for flash memory program/erase/verify operations.
Rev. 6.00 Feb 22, 2005 page 801 of 1484
REJ09B0103-0600