NP36P04SDG_15 Datasheet, PDF (8/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
NP36P04SDG
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19074EJ2V0DS