NP36P04SDG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

NP36P04SDG
-120
-100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = −10 V
-80
−4.5 V
-60
-40
-20
0
0
Pulsed
-1
-2
-3
-4
-5
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
VDS = VGS
-2.5
ID = −250 μA
-2
-1.5
-1
-0.5
0
-75
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
VGS = −4.5 V
10
0
-1
−10 V
Pulsed
-10
-100
ID - Drain Current - A
-1000
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = −10 V
Pulsed
-10
-1
-0.1
-0.01
-0.001
0
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
10
75°C
125°C
150°C
1
175°C
VDS = −10 V
Pulsed
0.1
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
ID = −36 A
30
−18 A
−8 A
20
10
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet D19074EJ2V0DS