NP36P04SDG_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

NP36P04SDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
R^D₍^S_V^{(oGnS) L=im−1iit0edV)}
ID(DC)
ID(pulse)
DC
PW
= _{1i00 μs}
80
70
60
50
40
30
20
10
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175 200
TC - Case Temperature - °C
-1
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/Wi
10
1
Rth(ch-C) = 2.68°C/Wi
0.1
0.01
100 μ
Single Pulse
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D19074EJ2V0DS
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