NP36P04SDG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = −4.5 V
20
10
0
-75
−10 V
ID = −18 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(off)
100
tf
10
VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.1
-1
tr
td(on)
-10
ID - Drain Current - A
-100
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-10
VGS = −10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP36P04SDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-12
-30
-20
-10
0
0
VDD = −32 V
−20 V
-9
−8 V
-6
VGS
-3
VDS
ID = −36 A
0
10 20 30 40 50 60
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19074EJ2V0DS
5