N0400P Datasheet, PDF (8/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

-100
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
IAS = −16 A
-10
EAS = 25 mJ
Starting Tch = 25°C
VDD = −20 V
RG = 25 Ω
VGS = −12 → 0 V
-1
10 μ
100 μ
1m
L - Inductive Load - H
10 m
N0400P
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = −20 V
100
RG = 25 Ω
VGS = −12 → 0 V
80
IAS ≤ −16 A
60
40
20
0
25
50
75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D19676EJ1V0DS