N0400P Datasheet, PDF (3/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N0400P
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications.
ORDERING INFORMATION
PART NUMBER
N0400P-ZK-E1-AY ^Note
N0400P-ZK-E2-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
FEATURES
• 2.5 V drive available
• Super low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −7.5 A)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
−40
V
m12
V
m15
A
m45
A
25
W
1.0
W
150
°C
−55 to +150 °C
−16
A
25
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −12 → 0 V
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
5.0
Channel to Ambient Thermal Resistance Rth(ch-A)
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19676EJ1V0DS00 (1st edition)
Date Published February 2009 NS
Printed in Japan
2009