N0400P Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0400P
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
-1
ID(pul s e)
R^D₍^S_V^{(oGnS) L=im−4it.e5dV)}
ID(DC)
DC
PW
= _{1i00 μs}
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
-0.1
-0.01
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 5.0°C/W
1
0.1
0.01
100 μ
1m
10 m
100 m
1
Single Pulse
10
100
1000
PW - Pulse Width - s
Data Sheet D19676EJ1V0DS
3