N0400P Datasheet, PDF (7/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0400P
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
70
60
VGS = −2.5 V
50
40
30
−4.5 V
20
10
0
-75
-25
25
Pulsed
75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
tr
10
VDD = −20 V
VGS = −4.5 V
RG = 0 Ω
1
-0.1
-1
td(on)
-10
ID - Drain Current - A
-100
-100
-10
-1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
−4.5 V
−2.5 V
VGS = 0 V
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-45
-4.5
-40
VDD = −32 V
-35
−20 V
−8 V
-30
-4
VGS
-3.5
-3
-25
-2.5
-20
-2
-15
-1.5
-10
VDS
-1
-5
ID = −15 A
-0.5
0
0
0
5
10
15
20
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
VGS = 0 V
di/dt = −100 A/μs
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19676EJ1V0DS
5