HN58V65A Datasheet, PDF (8/28 Pages) Hitachi Semiconductor – 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)

HN58V65A Series, HN58V66A Series
AC Characteristics (Ta = 0 to + 70°C, V_CC = 2.7 to 5.5 V)
Test Conditions
• Input pulse levels :
0.4 V to 2.4 V (V_CC = 2.7 to 3.6 V), 0.4 V to 3.0 V (V_CC = 3.6 to 5.5 V)
0 V to V_CC (RES pin*²)
• Input rise and fall time : ≤ 5 ns
• Input timing reference levels : 0.8, 1.8 V
• Output load : 1TTL Gate +100 pF
• Output reference levels : 1.5 V, 1.5 V
Read Cycle 1 (2.7 V ≤ V_CC < 4.5 V)
HN58V65A/HN58V66A
-10
Parameter
Symbol Min
Max
Address to output delay
t_ACC

100
CE to output delay
t_CE

100
OE to output delay
t_OE
10
50
Address to output hold
t_OH
0

OE (CE) high to output float*¹ t_DF
0
40
RES low to output float*^{1, 2}
t_DFR
0
350
RES to output delay*²
t_RR
0
450
Unit
ns
ns
ns
ns
ns
ns
ns
Test conditions
CE = OE = V_IL, WE = V_IH
OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = OE= V_IL, WE = V_IH
Rev.3.00, Dec. 04.2003, page 8 of 26